振動分光法で観察したアモルファスシリコン系半導体の水素の表面化学
1997 年 18 巻 9 号 p. 564-569
詳細
1997 年 18 巻 9 号 p. 564-569
Surface hydrogen on the growing films of amorphous semiconductors (typically a-Si: H) is monitored in-situ by polarization mondulated infrared reflectance spectroscopy with isotope exchange technique. Thermal desorption of surface hydrogen is observed above 300°C and discussed in relation to the film growth mechanism.
