A New Sputter Etching Technology by Gas-Cluster Ion Beam

Isao YAMADA; Jiro MATSUO; Noriaki TOYODA; Takaaki AOKI; Zinetulla INSEPOV

doi:10.1380/jsssj.18.743

ガスクラスターイオンビームによる表面エッチング

山田公, 松尾二郎, 豊田紀章, 青木学聡, Zinetulla INSEPOV

著者情報

ジャーナルフリー

1997 年 18 巻 12 号 p. 743-751

DOI https://doi.org/10.1380/jsssj.18.743

詳細

発行日: 1997/12/10 受付日: 1997/08/07 J-STAGE公開日: 2009/08/07 受理日: 1997/08/07 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 1) I. Yamada, G.H. Takaoka, M.I. Current, Y. Yamashita and M. Ishi: Nucl. Instrum. Methods, B 74, 341 (1993).
3) K. Nojiri and K. Tsunokuni: J. Vac. Sci. Technol. B 11, 1819 (1993).
4) G.S. Oehrlein, R.M. Tromp, J.C. Tsang, Y.H. Lee and E. J. Petrillo: J. Electrochem. Soc. 132, 1441 (1985).
5) H. Handersen and H.L. Bay: “Sputtering by Particle Bombardment 1” (Springer-Verlag, Berlin, 1981) p. 145.
6) I. Yamada and J. Matsuo: Materials Research Society Symposium Proceedings, Vol. 427, “Advanced Metallization for Future ULSI”, eds. by K.N. Tu, J.M. Poate, J.W. Mayer and L.C. Chen, 1996 (Materials Research Society, Pittsburgh, 1997) p. 265.
7) I. Yamada, J. Matsuo, Z. Insepov, D. Takeuchi, M. Akizuki and N. Toyoda: J. Vac. Sci. Technol. A 14 May/Jun, 781 (1996).
8) J. Matsuo, N. Toyoda, M. Akizuki and I. Yamada: Nucl. Instrum. Methods B 121, 459 (1997).
9) Z. Insepov and I. Yamada: Nucl. Instrum. Methods B 99, 248 (1995).
10) T. Aoki, J. Matsuo Z. Insepov and I. Yamada: Nucl. Instrum. Methods B 121, 49 (1997).
11) P. Sigmund: Appl. Phys. 47, 9(1981).
12) S.S. Johar and D.A. Thompson: Surf. Sci. 90, 319 (1979).
13) D.A. Thompson: Radiation Effects 56,105 (1981).
14) R. Beuhler and L. Friedman: Chem. Rev. 86, 521 (1986).
15) M.G. Blain, S. Della-Negra, H. Joret, Y. Le Beyac and E.A. Schweikert: Phys. Rev. Lett. 63-15, 1625 (1989).
16) P.R.W. Henkes and R. Lingelhöfer: Vacuum 39, 541 (1989).
17) J. Gspann: Nucl. Instrum. Methods B 112, 86 (1996).
18) Y. Kitazoe, N. Hiraoka and Y. Yamamura: Surf. Sci.111, 381 (1981)
19) J. Matsuo, H. Abe, G.H. Takaoka and I. Yamada: Nucl. Instrum. Methods B 99, 224 (1995).
20) T. Seki, T. Kaneko, D. Takeuchi, T. Aoki, J. Matsuo, Z. Insepov and I. Yamada: Nucl. Instrum. Methods B 121,498 (1997).
21) J. Matsuo, D. Takeuchi, A. Kitai and I. Yamada: Nucl. Instrum. Methods B 112, 89 (1997).
22) Z. Insepov and I. Yamada: Nucl. Instrum. Methods B 112, 16 (1995).
23) J. Matsuo, N. Toyoda and I. Yamada: J. Vac. Sci. Technol. B 14, 3951(1996).
25) M. Akizuki, J. Matsuo, M. Harada, S. Ogasawara, A. Doi, K. Yoneda, T. Yamaguchi, G.H. Takaoka, C.E. Ascheron and I. Yamada: Nucl. Instrum. Methods B 99, 229 (1995).
26) M. Akizuki, J. Matsuo, I. Yamada, M. Harada, S. Ogasawara and A. Doi: Nucl. Instrum. Methods B 112, 83 (1996).
27) M. Akizuki, J. Matsuo, S. Ogasawara, M. Harada, A. Doi and I. Yamada: Extended Abstracts of the 1995 Internal Conference on Solid State Devices and Materials, Osaka, 1995 (The Japan Society of Applied Physics, Tokyo, 1995) p. 31.
28) R.B. Fair: “Rapid Thermal Processing”, ed. by R.B. Fair (Academic Press, Inc., Boston, 1993) p. 169.
29) KS. Jones: “Rapid Thermal Processing”, ed. by R.B. Fair (Academic Press, Inc., Boston, 1993) p. 123.
30) K. Goto J. Matsuo, T. Sugii, H. Minakata, I. Yamada and T. Hisatsugu: IEDM Tech. Dig. 1996, p. 435.
31) D. Takeuchi, N. Shimada, J. Matsuo, I. Yamada: Nucl. Instrum. Methods B 121, 345 (1997).

Right : 1) I. Yamada, G.H. Takaoka, M.I. Current, Y. Yamashita and M. Ishi: Nucl. Instrum. Methods, B 74, 341 (1993).
3) K. Nojiri and K. Tsunokuni: J. Vac. Sci. Technol. B 11, 1819 (1993).
4) G.S. Oehrlein, R.M. Tromp, J.C. Tsang, Y.H. Lee and E. J. Petrillo: J. Electrochem. Soc. 132, 1441 (1985).
5) H. Handersen and H.L. Bay: “Sputtering by Particle Bombardment 1” (Springer-Verlag, Berlin, 1981) p. 145.
6) I. Yamada and J. Matsuo: Materials Research Society Symposium Proceedings, Vol. 427, “Advanced Metallization for Future ULSI”, eds. by K.N. Tu, J.M. Poate, J.W. Mayer and L.C. Chen, 1996 (Materials Research Society, Pittsburgh, 1997) p. 265.
7) I. Yamada, J. Matsuo, Z. Insepov, D. Takeuchi, M. Akizuki and N. Toyoda: J. Vac. Sci. Technol. A 14 May/Jun, 781 (1996).
8) J. Matsuo, N. Toyoda, M. Akizuki and I. Yamada: Nucl. Instrum. Methods B 121, 459 (1997).
9) Z. Insepov and I. Yamada: Nucl. Instrum. Methods B 99, 248 (1995).
10) T. Aoki, J. Matsuo Z. Insepov and I. Yamada: Nucl. Instrum. Methods B 121, 49 (1997).
11) P. Sigmund: Appl. Phys. 47, 9(1981).
12) S.S. Johar and D.A. Thompson: Surf. Sci. 90, 319 (1979).
13) D.A. Thompson: Radiation Effects 56,105 (1981).
14) R. Beuhler and L. Friedman: Chem. Rev. 86, 521 (1986).
15) M.G. Blain, S. Della-Negra, H. Joret, Y. Le Beyac and E.A. Schweikert: Phys. Rev. Lett. 63-15, 1625 (1989).
16) P.R.W. Henkes and R. Lingelhöfer: Vacuum 39, 541 (1989).
17) J. Gspann: Nucl. Instrum. Methods B 112, 86 (1996).
18) Y. Kitazoe, N. Hiraoka and Y. Yamamura: Surf. Sci.111, 381 (1981)
19) J. Matsuo, H. Abe, G.H. Takaoka and I. Yamada: Nucl. Instrum. Methods B 99, 224 (1995).
20) T. Seki, T. Kaneko, D. Takeuchi, T. Aoki, J. Matsuo, Z. Insepov and I. Yamada: Nucl. Instrum. Methods B 121,498 (1997).
21) J. Matsuo, D. Takeuchi, A. Kitai and I. Yamada: Nucl. Instrum. Methods B 112, 89 (1997).
22) Z. Insepov and I. Yamada: Nucl. Instrum. Methods B 112, 16 (1995).
23) J. Matsuo, N. Toyoda and I. Yamada: J. Vac. Sci. Technol. B 14, 3951(1996).
25) M. Akizuki, J. Matsuo, M. Harada, S. Ogasawara, A. Doi, K. Yoneda, T. Yamaguchi, G.H. Takaoka, C.E. Ascheron and I. Yamada: Nucl. Instrum. Methods B 99, 229 (1995).
26) M. Akizuki, J. Matsuo, I. Yamada, M. Harada, S. Ogasawara and A. Doi: Nucl. Instrum. Methods B 112, 83 (1996).
27) M. Akizuki, J. Matsuo, S. Ogasawara, M. Harada, A. Doi and I. Yamada: Extended Abstracts of the 1995 Internal Conference on Solid State Devices and Materials, Osaka, 1995 (The Japan Society of Applied Physics, Tokyo, 1995) p. 31.
28) R.B. Fair: “Rapid Thermal Processing”, ed. by R.B. Fair (Academic Press, Inc., Boston, 1993) p. 169.
29) KS. Jones: “Rapid Thermal Processing”, ed. by R.B. Fair (Academic Press, Inc., Boston, 1993) p. 123.
30) K. Goto J. Matsuo, T. Sugii, H. Minakata, I. Yamada and T. Hisatsugu: IEDM Tech. Dig. 1996, p. 435.
31) D. Takeuchi, N. Shimada, J. Matsuo, I. Yamada: Nucl. Instrum. Methods B 121, 345 (1997).

抄録

Sputtering with gas cluster ions, which are aggregates of a few thousands of atoms, has been investigated experimentally and theoretically. Cluster ion beam etching is equivalent to low-energy high-current ion etchings with very low damage. Interesting new phenomena resulting from multiple collisions of incoming atoms in a very localized area were found. A surface smoothing effect is one of the typical phenomena, which is caused by lateral sputtering in which many atoms are ejected from the substrate in a lateral direction. Molecular dynamics simulation clearly shows that these sputtered atoms are ejected from the edge of craters formed by cluster ion impact.

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