Trimethylgallium Surface Reaction as a Function of GaAs Reconstructed Structure

Masahiro SASAKI; Seikoh YOSHIDA

doi:10.1380/jsssj.18.796

GaAs表面再構成構造とトリメチルガリウムの表面反応

佐々木正洋, 吉田清輝

著者情報

ジャーナルフリー

1997 年 18 巻 12 号 p. 796-802

DOI https://doi.org/10.1380/jsssj.18.796

詳細

発行日: 1997/12/10 受付日: 1997/01/06 J-STAGE公開日: 2009/08/07 受理日: 1997/01/06 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 論文抄録訂正内容: Wrong : The surface reaction of trimethylgallium (TMG) is discussed as a function of relaxed or reconstructed GaAs surface structure on the basis of pulsed molecular beam scatterings from stoichiometry controlled GaAs(100), (110) and (111)B surfaces. The results are interpreted within the framework of the precursor-mediated adsorption mechanism, where TMG surface reaction is determined by the depth of the precursor state and the stability of the surface structure. It is believed that the precursor state is deepened by the electrostatic behavior in the GaAs surface structure. The topmost As atoms which have only bonds to As atoms hinder TMG trapping in the precursor state; implying the mechanism of the growth suppression on the (2×2)-reconstructed (111)B surface and the As-passivation technique.
Right : The surface reaction of trimethylgallium (TMG) is discussed as a function of relaxed or reconstructed GaAs surface structure on the basis of pulsed molecular beam scatterings from stoichiometry controlled GaAs(100), (110) and (111)B surfaces. The results are interpreted within the framework of the precursor-mediated adsorption mechanism, where TMG surface reaction is determined by the depth of the precursor state and the stability of the surface structure. It is believed that the precursor state is deepened by the electrostatic behavior in the GaAs surface structure. The topmost As atoms which have only bonds to As atoms hinder TMG trapping in the precursor state; implying the mechanism of the growth suppression on the (2×2)-reconstructed (111)B surface and the As-passivation technique.

訂正日: 2009/08/07 訂正理由: - 訂正箇所: 所属機関情報訂正内容: Wrong :
1) Institute of Applied Physics, University of Tsukuba
2) Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.

Right :
1) Institute of Applied Physics, University of Tsukuba
2) Yokohama R & D Laboratories, The Furukawa Electric Co., Ltd.

抄録

The surface reaction of trimethylgallium (TMG) is discussed as a function of relaxed or reconstructed GaAs surface structure on the basis of pulsed molecular beam scatterings from stoichiometry controlled GaAs(100), (110) and (111)B surfaces. The results are interpreted within the framework of the precursor-mediated adsorption mechanism, where TMG surface reaction is determined by the depth of the precursor state and the stability of the surface structure. It is believed that the precursor state is deepened by the electrostatic behavior in the GaAs surface structure. The topmost As atoms which have only bonds to As atoms hinder TMG trapping in the precursor state; implying the mechanism of the growth suppression on the (2×2)-reconstructed (111)B surface and the As-passivation technique.

責任著者(Corresponding author)

訂正情報

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