Effect of Heat Treatments on the Oxygen Adsorbed on Si(100) Surface

Teguh Rusyanto; Masanori IKEDA; Naoyuki NAGASHIMA

doi:10.1380/jsssj.18.85

Si(100)表面における酸素結合状態の加熱処理による変化

Teguh Rusyanto, 池田正則, 長嶋直之

著者情報

ジャーナルフリー

1997 年 18 巻 2 号 p. 85-92

DOI https://doi.org/10.1380/jsssj.18.85

詳細

発行日: 1997/02/10 受付日: 1996/06/27 J-STAGE公開日: 2009/08/07 受理日: 1996/09/04 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 論文抄録訂正内容: Wrong : X-ray photoelectron spectroscopy (XPS) has been used to investigate the Si(100) surfaces exposed to 02 at room temperature and subsequently heated to various temperatures ranging from 200°C to 800°C. Each 01s spectrum observed was deconvoluted into two Gaussian curves with peaks at (531.8 ± 0.3) eV and (533.6 ± 0.3) eV. The surface density of high binding energy component (533.6 ± 0.3) eV decreased with increasing temperature up to 400°C. On the other hand, the surface density of low binding energy component (531.8 ± 0.3) eV increased with increasing temperature up to 400°C. Furthermore high binding energy component increased as a result of heating at a high temperature above 400°C, and all of the oxygen adsorbed were removed from the surface by heating at temperatures above 750°C. The change of the surface density of the two components with temperature was discussed in relation to the bonding states of oxygen to silicon surfaces.
Right : X-ray photoelectron spectroscopy (XPS) has been used to investigate the Si(100) surfaces exposed to 02 at room temperature and subsequently heated to various temperatures ranging from 200°C to 800°C. Each 01s spectrum observed was deconvoluted into two Gaussian curves with peaks at (531.8 ± 0.3) eV and (533.6 ± 0.3) eV. The surface density of high binding energy component (533.6 ± 0.3) eV decreased with increasing temperature up to 400°C. On the other hand, the surface density of low binding energy component (531.8 ± 0.3) eV increased with increasing temperature up to 400°C. Furthermore high binding energy component increased as a result of heating at a high temperature above 400°C, and all of the oxygen adsorbed were removed from the surface by heating at temperatures above 750°C. The change of the surface density of the two components with temperature was discussed in relation to the bonding states of oxygen to silicon surfaces.

訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 1) K. Fujiwara and H. Ogata: J. Appl. Phys. 48, 4360 (1977).
2) H. Ibach, H. D. Bruchmann and H. Wagner: Appl. Phys. A29,113 (1982).
3) M. Nishijima, H. Kobayashi, K. Edamoto and M. Onchi: Surf. Sci. 137, 473 (1984).
4) J.A. Schaefer and W. Gopel: Surf. Sci. 155, 535 (1985).
5) A.J. Schell-Sorokin and J.E. Demuth: Surf. Sci. 157, 273 (1985).
6) K. Edamoto, Y. Kubota, H. Kobayashi, M. Onchi and M. Nishijima: J. Chem. Phys. 83, 428 (1985).
7) M. Nishijima, K. Edamoto, Y. Kubota, H. Kobayashi and M. Onchi: Surf. Sci. 158, 422 (1985).
8) T. Miyake, S. Soeki, H. Kato, T. Nakamura, A. Namiki, H. Kamba and T. Suzaki: Phys. Rev B 42, 11801 (1990).
9) G. Hollinger and F.J. Himpsel: J. Vac. Sci. Tech. Al, 640 (1983); Phys. Rev. B28, 3651(1983); Appl. Phys. Lett. 44, 93 (1984).
10) T. Hattori and T. Suzaki: Appl. Phys. Lett. 43, 470 (1983).
11) P. Morgen, W. Wurth and E. Umbach: Surf. Sci. 152/153, 1086 (1985).
12) W. Ranke and Y.R. Xing: Surf. Sci. 157, 353 (1985).
13) G. Hollinger, J.F. Morar, F.J. Himpsel, G. Hughes and J. L. Jordan: Surf. Sci. 168, 609 (1986).
14) M. Tabe, T.T. Chiang, I. Lindau and W.E. Spicer: Phys. Rev. B 34, 2706 (1986).
15) P.J. Grunthaner, M.H. Hecht and F.J. Grunthaner: J. Appl. Phys. 61, 629 (1987).
16) F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi, J.A. Yarmoff and G. Hollinger: Phys. Rev. B 38, 6084 (1988).
17) K. Uno, A. Namiki, S. Zaima, T. Nakamura and N. Ohtake: Surf. Sci. 193, 321 (1988).
18) A. Namiki, K. Tanimoto, T. Nakamura, N. Murayama and T. Suzaki: Surf. Sci. 203, 129 (1988).
19) A. Namiki, K. Tanimoto, T. Nakamura, N. Ohtake and T. Suzaki: Surf. Sci. 222, 530 (1989).
20) N. Nakazawa, S. Kawase and H. Sekiyama: J. Appl. Phys. 65, 4014 (1989).
21) U. Höfer, P. Morgen, W. Wurth and E. Umbach: Phys. Rev. B 40,1130 (1989); Phys. Rev. Lett. 55, 27 (1985).
22) F. Lutz, J.L. Bischoff, L.Kubler and D. Bolmont: Phys. Rev. B 40, 10356 (1989).
23) M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami and K. Suma: Appl. Phys. Lett. 55, 562 (1989).
24) M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami and M. Ohwada: J. Appl. Phys. 68,1272 (1990).
25) J.R. Engstrom and T. Engel: Phys. Rev. B 41,1038 (1990).
26) J.R. Engstrom, D.J. Bonser, M.M. Nelson and T. Engel: Surf. Sci. 256, 317 (1991).
27) K. Prabhakaran, Y. Kobayashi and T. Ogino: Surf. Sci. 290, 239 (1993).
28) T. Hattori, H. Nohira, Y. Tamura and H. Ogawa: Jpn. J. Appl. Phys. 31, L638 (1992).
29) T. Tokumoto, K. Miki, H. Murakami, H. Bando, H. Ono and K. Kajimura: J. Vac. Sci. Tech. A 8, 255 (1990).
30) J.P. Pelz and R.H. Koch: Phys. Rev. B 42, 3761 (1990).
31) D.G. Cahill and Ph. Avouris: Appl. Phys. Lett. 60, 326 (1992).
32) M. Udagawa, M. Niwa and I. Sumita: Jpn. J. Appl. Phys. 32, 282 (1993).
33) Y. Ono, M. Tabe and H. Kageshima: Phys. Rev. B 48, 14291 (1993).
34) I.P. Batra, P.S. Bagus and K. Hermann: Phys. Rev. Lett. 52, 384 (1984).
35) D.A. Shirley: Phys. Rev. B 5, 4709 (1972).
36) F.J. Himpsel, P. Heimann, T.C. Chiang and D.E. Eastman: Phys. Rev. Lett. 45,1112 (1980).
37) D. Briggs and M.P. Seah: “Practical Surface Analysis” (John Wiley & Sons, Chichester, 1983) p. 450.

Right : 1) K. Fujiwara and H. Ogata: J. Appl. Phys. 48, 4360 (1977).
2) H. Ibach, H. D. Bruchmann and H. Wagner: Appl. Phys. A29,113 (1982).
3) M. Nishijima, H. Kobayashi, K. Edamoto and M. Onchi: Surf. Sci. 137, 473 (1984).
4) J.A. Schaefer and W. Gopel: Surf. Sci. 155, 535 (1985).
5) A.J. Schell-Sorokin and J.E. Demuth: Surf. Sci. 157, 273 (1985).
6) K. Edamoto, Y. Kubota, H. Kobayashi, M. Onchi and M. Nishijima: J. Chem. Phys. 83, 428 (1985).
7) M. Nishijima, K. Edamoto, Y. Kubota, H. Kobayashi and M. Onchi: Surf. Sci. 158, 422 (1985).
8) T. Miyake, S. Soeki, H. Kato, T. Nakamura, A. Namiki, H. Kamba and T. Suzaki: Phys. Rev B 42, 11801 (1990).
9) G. Hollinger and F.J. Himpsel: J. Vac. Sci. Tech. Al, 640 (1983); Phys. Rev. B28, 3651(1983); Appl. Phys. Lett. 44, 93 (1984).
10) T. Hattori and T. Suzaki: Appl. Phys. Lett. 43, 470 (1983).
11) P. Morgen, W. Wurth and E. Umbach: Surf. Sci. 152/153, 1086 (1985).
12) W. Ranke and Y.R. Xing: Surf. Sci. 157, 353 (1985).
13) G. Hollinger, J.F. Morar, F.J. Himpsel, G. Hughes and J. L. Jordan: Surf. Sci. 168, 609 (1986).
14) M. Tabe, T.T. Chiang, I. Lindau and W.E. Spicer: Phys. Rev. B 34, 2706 (1986).
15) P.J. Grunthaner, M.H. Hecht and F.J. Grunthaner: J. Appl. Phys. 61, 629 (1987).
16) F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi, J.A. Yarmoff and G. Hollinger: Phys. Rev. B 38, 6084 (1988).
17) K. Uno, A. Namiki, S. Zaima, T. Nakamura and N. Ohtake: Surf. Sci. 193, 321 (1988).
18) A. Namiki, K. Tanimoto, T. Nakamura, N. Murayama and T. Suzaki: Surf. Sci. 203, 129 (1988).
19) A. Namiki, K. Tanimoto, T. Nakamura, N. Ohtake and T. Suzaki: Surf. Sci. 222, 530 (1989).
20) N. Nakazawa, S. Kawase and H. Sekiyama: J. Appl. Phys. 65, 4014 (1989).
21) U. Höfer, P. Morgen, W. Wurth and E. Umbach: Phys. Rev. B 40,1130 (1989); Phys. Rev. Lett. 55, 27 (1985).
22) F. Lutz, J.L. Bischoff, L.Kubler and D. Bolmont: Phys. Rev. B 40, 10356 (1989).
23) M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami and K. Suma: Appl. Phys. Lett. 55, 562 (1989).
24) M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami and M. Ohwada: J. Appl. Phys. 68,1272 (1990).
25) J.R. Engstrom and T. Engel: Phys. Rev. B 41,1038 (1990).
26) J.R. Engstrom, D.J. Bonser, M.M. Nelson and T. Engel: Surf. Sci. 256, 317 (1991).
27) K. Prabhakaran, Y. Kobayashi and T. Ogino: Surf. Sci. 290, 239 (1993).
28) T. Hattori, H. Nohira, Y. Tamura and H. Ogawa: Jpn. J. Appl. Phys. 31, L638 (1992).
29) T. Tokumoto, K. Miki, H. Murakami, H. Bando, H. Ono and K. Kajimura: J. Vac. Sci. Tech. A 8, 255 (1990).
30) J.P. Pelz and R.H. Koch: Phys. Rev. B 42, 3761 (1990).
31) D.G. Cahill and Ph. Avouris: Appl. Phys. Lett. 60, 326 (1992).
32) M. Udagawa, M. Niwa and I. Sumita: Jpn. J. Appl. Phys. 32, 282 (1993).
33) Y. Ono, M. Tabe and H. Kageshima: Phys. Rev. B 48, 14291 (1993).
34) I.P. Batra, P.S. Bagus and K. Hermann: Phys. Rev. Lett. 52, 384 (1984).
35) D.A. Shirley: Phys. Rev. B 5, 4709 (1972).
36) F.J. Himpsel, P. Heimann, T.C. Chiang and D.E. Eastman: Phys. Rev. Lett. 45,1112 (1980).
37) D. Briggs and M.P. Seah: “Practical Surface Analysis” (John Wiley & Sons, Chichester, 1983) p. 450.

抄録

X-ray photoelectron spectroscopy (XPS) has been used to investigate the Si(100) surfaces exposed to 02 at room temperature and subsequently heated to various temperatures ranging from 200°C to 800°C. Each 01s spectrum observed was deconvoluted into two Gaussian curves with peaks at (531.8 ± 0.3) eV and (533.6 ± 0.3) eV. The surface density of high binding energy component (533.6 ± 0.3) eV decreased with increasing temperature up to 400°C. On the other hand, the surface density of low binding energy component (531.8 ± 0.3) eV increased with increasing temperature up to 400°C. Furthermore high binding energy component increased as a result of heating at a high temperature above 400°C, and all of the oxygen adsorbed were removed from the surface by heating at temperatures above 750°C. The change of the surface density of the two components with temperature was discussed in relation to the bonding states of oxygen to silicon surfaces.

責任著者(Corresponding author)

訂正情報

J-STAGEへの登録はこちら（無料）