1998 年 19 巻 1 号 p. 28-34
A tunneling-electron luminescence (TL) microscope using the tip collection method has been developed for realspace characterization of the electronic and optical properties of materials and structures with nanometer-level spatial resolutions. Tip collection can provide spatial resolution, luminescence collection yield, and thermal isolation. The new microscope has a novel conductive transparent tip that injects tunneling electrons into a sample and simultaneously collects tunneling-electron luminescence. Using the TL microscope, high S/N TL spectra and TL images with high spatial resolution (<3 nm) were successfully obtained on the cross-section of GaAs/AlAs multiple quantum wells at low temperatures.