Observation of Si(111) Surfaces Using Energy-analyzed Electrons

Mineharu SUZUKI; Kadena MOGI; Yoshikazu HOMMA

doi:10.1380/jsssj.19.48

Si(111)表面の分光電子観察

鈴木峰晴, 茂木カデナ, 本間芳和

著者情報

ジャーナルフリー

1998 年 19 巻 1 号 p. 48-52

DOI https://doi.org/10.1380/jsssj.19.48

詳細

発行日: 1998/01/10 受付日: 1997/07/02 J-STAGE公開日: 2009/08/07 受理日: 1997/09/05 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 2) Y. Homma, M. Tomita and T. Hayashi: Surf. Sci. 258, 147 (1991).
4) Y. Homma, M. Suzuki and M. Tomita: Appl. Phys. Lett. 62, 3276 (1993).
5) T. Doi, M. Ichikawa and S. Hosoki: Jpn. J. Appl. Phys. 35, L 458 (1996).
6) A. Howie: J. Microscopy 180, 192 (1995).
8) M. Prutton, L.A. Larson and H. Poppa: J. Appl. Phys. 54, 374 (1983).
9) M.M. El Gomati, M. Prutton, B. Lamb and C.G. Tuppen: Surf. Interface Anal. 11, 251 (1988).
10) A. Umbach, A. Hoyer and W.H. Brünger: Surf. Interface Anal. 14, 401 (1989).
11) W. Hösler: Surf. Interface Anal. 17, 543 (1991).
12) M. Suzuki, K. Mogi, T. Ogino and S. Ichimura: J. Surface Anal. 3, 458 (1997).
13) M. Suzuki, Y. Homma, Y. Kudo and R. Kaneko: Ultramicroscopy 42-44, 940 (1992).
14) G.C. Smith: “Surface Analysis by Electron Spectroscopy Measurement and Interpretation” (Plenum Press, New York, 1994) Chapter 6.
16) CS. Fadley: J. Surface Analysis 3, 334 (1997).
17) S. Ichimura and A. Kurokawa: J. Surface Analysis 3, 328 (1997).

Right : 2) Y. Homma, M. Tomita and T. Hayashi: Surf. Sci. 258, 147 (1991).
4) Y. Homma, M. Suzuki and M. Tomita: Appl. Phys. Lett. 62, 3276 (1993).
5) T. Doi, M. Ichikawa and S. Hosoki: Jpn. J. Appl. Phys. 35, L 458 (1996).
6) A. Howie: J. Microscopy 180, 192 (1995).
8) M. Prutton, L.A. Larson and H. Poppa: J. Appl. Phys. 54, 374 (1983).
9) M.M. El Gomati, M. Prutton, B. Lamb and C.G. Tuppen: Surf. Interface Anal. 11, 251 (1988).
10) A. Umbach, A. Hoyer and W.H. Brünger: Surf. Interface Anal. 14, 401 (1989).
11) W. Hösler: Surf. Interface Anal. 17, 543 (1991).
12) M. Suzuki, K. Mogi, T. Ogino and S. Ichimura: J. Surface Anal. 3, 458 (1997).
13) M. Suzuki, Y. Homma, Y. Kudo and R. Kaneko: Ultramicroscopy 42-44, 940 (1992).
14) G.C. Smith: “Surface Analysis by Electron Spectroscopy Measurement and Interpretation” (Plenum Press, New York, 1994) Chapter 6.
16) CS. Fadley: J. Surface Analysis 3, 334 (1997).
17) S. Ichimura and A. Kurokawa: J. Surface Analysis 3, 328 (1997).

抄録

A stepped Si(111) surface consisted of atomically flat terraces and step bands where atomic steps bunched was prepared by direct-current heating in UHV. An electron-emission spectrum, generated with a field-emission-type electron gun, was observed in situ with a scanning Auger microscope (SAM). The electron-emission spectrum obtained in the direct mode included only characteristic Auger electron (AE) peaks of silicon and a secondary-electron (SE) peak. The AE/SE spectrum obtained from the atomically flat Si(111) terrace between the steps was different from the spectra from sputtered clean silicon (111) and (100) surfaces as to the background shape and the relative intensities of the characteristic peaks. We also found that the stepped surface morphology could be imaged by using only the energy-analyzed SEs when the intensity was defined as the difference between the peak height and the background intensity.

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