Quantitative analysis of shallow plasma doped boron was carried out by Quad SIMS under several bombardment conditions of primary oxygen beam. Energy of oxygen primary beam was in a range of sub keV and the incident angle was evaluated at glancing angle under the condition of oxygen leak and also at near normal angle on the sample surfaces. By using shallow implanted standard, average sputtering rate and RSF were obtained. The results of quantitative analysis at the depth deeper than 2-4 nm were similar under all measuring conditions. Also it was found that angle dependence on sputtering yield of oxygen beam at 250 eV was smaller than that at 10 keV energy.