Self-assembly and Self-organization in Semiconductor Growth InGaAs Quantum Disks Self-organized on GaAs(311)B

Jiro TEMMYO; Toshiaki TAMAMURA

doi:10.1380/jsssj.19.546

半導体結晶成長における自己集合化と自己組織化

GaAs(311)面上のInGaAsナノ構造形成

天明二郎, 玉村敏昭

著者情報

ジャーナルフリー

1998 年 19 巻 9 号 p. 546-550

DOI https://doi.org/10.1380/jsssj.19.546

詳細

発行日: 1998/09/10 受付日: 1998/04/25 J-STAGE公開日: 2009/08/07 受理日: 1998/04/25 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 1) J.-M. Lehn: “Supramolecular Chemistry Concepts and Perspectives” (VCH, Weinheim,1995).
2) F. Castets, E. Dulos, J. Boissonade and P. De Kepper: Phys. Rev. Lett. 64, 2953 (1990).
3) A.M. Turing: Phil. Trans. R. Soc. B 237, 37 (1952).
4) E. Bauer: Z. Kristallogr. 110, 372 (1958).
5) W.K. Burton, N. Cabrera and F.C. Frank: Philos. Trans. R. Soc. London Ser. A 243, 299 (1951).
6) J.A. Venables, G.D.T. Spiller and M. Hanbucken: Rep. Prog. Phys. 47, 399 (1984).
7) K. Kumakura, J. Motohisa and T. Fukui: J. Cryst. Growth 170, 700 (1997).
8) L. Goldstein, F. Glas, J.Y. Marzin, M.N. Charasse and G. Le Roux: Appl. Phys. Lett. 47, 1099 (1985).
9) D. Leonard, K. Pond and P.M. Peroff: Phys. Rev. B 50, 11687 (1994).
10) R. Nözel, J. Temmyo and T. Tamamura: Nature 369, 131 (1994).
11) J. Temmyo, R. Nözel and T. Tamamura: Appl. Phys. Lett. 71, 1086 (1997).
12) E. Kuramochi, J. Temmyo, T. Tamamura and H. Kamada: Appl. Phys. Lett. 71, 1655 (1997).
13) J. Temmyo, E. Kuramochi, H. Kamada and T. Tamamura: J. Cryst. Growth (to be published).
14) J. Temmyo and T. Tamamura: Jpn. J. Appl. Phys. 37, 1487 (1998).

Right : 1) J.-M. Lehn: “Supramolecular Chemistry Concepts and Perspectives” (VCH, Weinheim,1995).
2) F. Castets, E. Dulos, J. Boissonade and P. De Kepper: Phys. Rev. Lett. 64, 2953 (1990).
3) A.M. Turing: Phil. Trans. R. Soc. B 237, 37 (1952).
4) E. Bauer: Z. Kristallogr. 110, 372 (1958).
5) W.K. Burton, N. Cabrera and F.C. Frank: Philos. Trans. R. Soc. London Ser. A 243, 299 (1951).
6) J.A. Venables, G.D.T. Spiller and M. Hanbucken: Rep. Prog. Phys. 47, 399 (1984).
7) K. Kumakura, J. Motohisa and T. Fukui: J. Cryst. Growth 170, 700 (1997).
8) L. Goldstein, F. Glas, J.Y. Marzin, M.N. Charasse and G. Le Roux: Appl. Phys. Lett. 47, 1099 (1985).
9) D. Leonard, K. Pond and P.M. Peroff: Phys. Rev. B 50, 11687 (1994).
10) R. Nözel, J. Temmyo and T. Tamamura: Nature 369, 131 (1994).
11) J. Temmyo, R. Nözel and T. Tamamura: Appl. Phys. Lett. 71, 1086 (1997).
12) E. Kuramochi, J. Temmyo, T. Tamamura and H. Kamada: Appl. Phys. Lett. 71, 1655 (1997).
13) J. Temmyo, E. Kuramochi, H. Kamada and T. Tamamura: J. Cryst. Growth (to be published).
14) J. Temmyo and T. Tamamura: Jpn. J. Appl. Phys. 37, 1487 (1998).

抄録

This paper reviews the present status of self processes for semiconductor nanostructures. The term “self-process” includes the concepts of self-assembly and self-organization, which is clearly distinguished following Lehn's definition. We describe self-assembled InAs islands grown on a GaAs(100) surface and self-organized InGaAs disks grown on a GaAs(311)B surface. We touch on the future aspects of a novel role for nanostructures via semiconductor selfprocesses.

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