Fabrication of InGaAs Quantum Dots by Atomic Hydrogen Assisted Molecular Beam Epitaxy

Kouichi AKAHANE; Mitsuo KAWABE

doi:10.1380/jsssj.19.573

原子状水素援用MBEによるInGaAs量子ドットの作製

赤羽浩一, 川辺光央

著者情報

ジャーナルフリー

1998 年 19 巻 9 号 p. 573-578

DOI https://doi.org/10.1380/jsssj.19.573

詳細

発行日: 1998/09/10 受付日: 1998/05/12 J-STAGE公開日: 2009/08/07 受理日: 1998/05/12 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 1) T. Sugaya and M. Kawabe: Jpn. J. Appl. Phys. 30, L 402 (1991).
3) Y.J. Chun, Y. Okada and M. Kawabe: Jpn. J. Appl. Phys. 32, L 1085 (1993).
4) Y.J. Chun, S. Nakajima, Y. Okada and M. Kawabe: Physica B 227, 299 (1996).
5) M. Kitamura, M. Nishioka, J. Oshinowo and Y. Arakawa: Jpn. J. Appl. Phys. 34, L 4376 (1995).
6) Y. Arakawa, M. Nishioka, H. Nakayama and M. Kitamura: IEICE TRANS. ELECTRON. E 79-C, 1487 (1996).
7) J.Y. Marzin, J.M. Gerard, A. Izrael and D. Barrier: Phys. Rev. Lett. 73, 716 (1994).
8) G.S. Solomon, J.A. Trezza, A.F. Marshall and J.S. Harris, Jr.: Phys. Rev. Lett. 76, 952 (1996).
9) R. Nötzel, J. Temmyo and T. Tamamura: Nature 369, 131 (1994).
10) V.A. Shchukin, N.N. Ledentsov, P.S. Kop'ev and D. Bimberg: Phys. Rev. Left. 75, 2968 (1995).
11) Y.J. Chun, S. Nakajima and M. Kawabe: Jpn. J. Appl. Phys. 35, L 1075 (1996).
12) M. Kawabe, Y.J. Chun, S. Nakajima and K. Akahane: Jpn. J. Appl. Phys. 36,4078 (1997).

Right : 1) T. Sugaya and M. Kawabe: Jpn. J. Appl. Phys. 30, L 402 (1991).
3) Y.J. Chun, Y. Okada and M. Kawabe: Jpn. J. Appl. Phys. 32, L 1085 (1993).
4) Y.J. Chun, S. Nakajima, Y. Okada and M. Kawabe: Physica B 227, 299 (1996).
5) M. Kitamura, M. Nishioka, J. Oshinowo and Y. Arakawa: Jpn. J. Appl. Phys. 34, L 4376 (1995).
6) Y. Arakawa, M. Nishioka, H. Nakayama and M. Kitamura: IEICE TRANS. ELECTRON. E 79-C, 1487 (1996).
7) J.Y. Marzin, J.M. Gerard, A. Izrael and D. Barrier: Phys. Rev. Lett. 73, 716 (1994).
8) G.S. Solomon, J.A. Trezza, A.F. Marshall and J.S. Harris, Jr.: Phys. Rev. Lett. 76, 952 (1996).
9) R. Nötzel, J. Temmyo and T. Tamamura: Nature 369, 131 (1994).
10) V.A. Shchukin, N.N. Ledentsov, P.S. Kop'ev and D. Bimberg: Phys. Rev. Left. 75, 2968 (1995).
11) Y.J. Chun, S. Nakajima and M. Kawabe: Jpn. J. Appl. Phys. 35, L 1075 (1996).
12) M. Kawabe, Y.J. Chun, S. Nakajima and K. Akahane: Jpn. J. Appl. Phys. 36,4078 (1997).

抄録

In this paper, we show the effect of atomic hydrogen (H) irradiation on the fabrication of InGaAs quantum dots (QDs) by self-organization process in molecular beam epitaxy. The size of QDs decreased by atomic H irradiation. The high density InGaAs QDs are formed uniformly by atomic H irradiation, while they are distributed mainly along the step edges without H irradiation. On the other hand, atomic H irradiation also improved photoluminescence (PL) properties. PL intensity increase and line width decrease were observed with atomic H irradiated samples. In addition, we fabricated InGaAs QDs on GaAs(311)B substrate. The ordered structures of QDs were obtained on this surface, and the effects of atomic H irradiation were also observed in growth.

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