The Synthesis and Properties of New Surface Materials

Yuji MATSUMOTO; Ken-ichi TANAKA

doi:10.1380/jsssj.19.635

表面新物質の合成とその物性

松本祐司, 田中虔一

著者情報

ジャーナルフリー

1998 年 19 巻 10 号 p. 635-642

DOI https://doi.org/10.1380/jsssj.19.635

詳細

発行日: 1998/10/10 受付日: 1997/10/15 J-STAGE公開日: 2009/08/07 受理日: 1997/10/15 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 論文抄録訂正内容: Wrong : Patterning of metal surfaces by using chemical reactions is a promissing method for the atomic-scale surface fabrica-tion. In this paper we present patterning reactions involving self-assembly processes with two examples: (1) (-Cu-O-) on Ag(110), which is prepared using such a chemical reaction as (-Ag-O-)+Cu→(-Cu-O-)+Ag on Ag(110) and the de-composition of (-Cu-O-) strings on Ag(110) forming a uniform size Cu₆ cluster; (2) Depositing Ni on c(2×2)-N Cu (100), where Ni thin films with an average size of 50Å are grown at the crossing of the boundaries of c(2×2)-N patches. In addition, we also show HREELS and ARUPS data in the (-Cu-O-) Ag(110) surface.
Right : Patterning of metal surfaces by using chemical reactions is a promissing method for the atomic-scale surface fabrica-tion. In this paper we present patterning reactions involving self-assembly processes with two examples: (1) (-Cu-O-) on Ag(110), which is prepared using such a chemical reaction as (-Ag-O-)+Cu→(-Cu-O-)+Ag on Ag(110) and the de-composition of (-Cu-O-) strings on Ag(110) forming a uniform size Cu₆ cluster; (2) Depositing Ni on c(2×2)-N Cu (100), where Ni thin films with an average size of 50Å are grown at the crossing of the boundaries of c(2×2)-N patches. In addition, we also show HREELS and ARUPS data in the (-Cu-O-) Ag(110) surface.

訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 1) G. Binnig, H. Rohrer, Ch. Gerber and E. Weibel: Phys. Rev. Lett. 49, 57 (1982).
2) D.M. Eigler and E.K. Schweizer: Nature 344, 524 (1990).
3) K. Tanaka: J.J. Appl. Phys. 32,1389 (1993).
4) M. Taniguchi, K. Tanaka, T. Hashizume and T. Sakurai: Surf. Sci. Lett. 262, L 123 (1992); M. Taniguchi, K. Tanaka, T. Hashizume and T. Sakurai: Chem. Phys. Lett. 192,117 (1992).
5) Y. Matsumoto, K. Sakamoto, Y. Okawa, S. Suto and K. Tanaka: J. Chem. Phys. 107, 10185 (1997).
7) Y. Matsumoto and K. Tanaka: Surf. Sci. Lett. 350, L 227 (1996); Y. Matsumoto and K. Tanaka: Vac. Sci. Technol. B 14,1114 (1996).
8) Y. Okawa and K. Tanaka: Surf. Sci. Lett. 344, L 1207 (1995); I. Stensgaard, E. Laegsgaard and F. Besenbacher: J. Chem. Phys. 103, 9825 (1995).
9) Ch. Wöll, S. Chiang, R.J. Wilson and P.H. Lipper: Phys. Rev. B 39, 7988 (1989); J.V. Barth, H. Brune, G. Ertle and R.J. Behm: Phys. Rev. B. 42, 9307 (1990); D. D Chambliss, R.J. Wilson and S. Chiang: Phys. Rev. Lett. 66, 1721 (1991).
10) D.D. Chambliss, R.J. Wilson and S. Chiang: Phys. Rev. Lett. 66, 1721 (1991); B. Voigtlander, G. Meyer and N. M. Amer: Phys. Rev. B 44, 10454 (1991); J.A. Strocio, D.T. Piere, R.A. Dragoeset and P.N. First: J. Vac. Sci. Technol. B 9, 933 (1991).
11) F.M. Moller, O.M. Magnussen and R.J. Behm: Phys. Rev. Lett. 77, 5249 (1996).
12) F.M. Leibsle, C.F.J. Flipse and A.W. Robinson: Phys. Rev. B 47, 15865 (1993); F.M. Leibsle, S.S. Dhesi, S.D. Barrett and A.W. Robinson: Surf. Sci. 317, 309 (1994).
13) Y. Matsumoto and K. Tanaka: Jpn. Appl. Phys. 37, Pt 2, No. 2 A, L 154 (1998).
14) K. Tanaka, Y. Matsumoto, T. Fujita and Y. Okawa: Appl. Surf. Sci. 130-132, 475 (1998).
15) E. Bauer: Z. Kristallogr.110, 372 (1958); E. Bauer and J. H. van der Merwe: Phys. Rev. B 33, 3657 (1986).

Right : 1) G. Binnig, H. Rohrer, Ch. Gerber and E. Weibel: Phys. Rev. Lett. 49, 57 (1982).
2) D.M. Eigler and E.K. Schweizer: Nature 344, 524 (1990).
3) K. Tanaka: J.J. Appl. Phys. 32,1389 (1993).
4) M. Taniguchi, K. Tanaka, T. Hashizume and T. Sakurai: Surf. Sci. Lett. 262, L 123 (1992); M. Taniguchi, K. Tanaka, T. Hashizume and T. Sakurai: Chem. Phys. Lett. 192,117 (1992).
5) Y. Matsumoto, K. Sakamoto, Y. Okawa, S. Suto and K. Tanaka: J. Chem. Phys. 107, 10185 (1997).
7) Y. Matsumoto and K. Tanaka: Surf. Sci. Lett. 350, L 227 (1996); Y. Matsumoto and K. Tanaka: Vac. Sci. Technol. B 14,1114 (1996).
8) Y. Okawa and K. Tanaka: Surf. Sci. Lett. 344, L 1207 (1995); I. Stensgaard, E. Laegsgaard and F. Besenbacher: J. Chem. Phys. 103, 9825 (1995).
9) Ch. Wöll, S. Chiang, R.J. Wilson and P.H. Lipper: Phys. Rev. B 39, 7988 (1989); J.V. Barth, H. Brune, G. Ertle and R.J. Behm: Phys. Rev. B. 42, 9307 (1990); D. D Chambliss, R.J. Wilson and S. Chiang: Phys. Rev. Lett. 66, 1721 (1991).
10) D.D. Chambliss, R.J. Wilson and S. Chiang: Phys. Rev. Lett. 66, 1721 (1991); B. Voigtlander, G. Meyer and N. M. Amer: Phys. Rev. B 44, 10454 (1991); J.A. Strocio, D.T. Piere, R.A. Dragoeset and P.N. First: J. Vac. Sci. Technol. B 9, 933 (1991).
11) F.M. Moller, O.M. Magnussen and R.J. Behm: Phys. Rev. Lett. 77, 5249 (1996).
12) F.M. Leibsle, C.F.J. Flipse and A.W. Robinson: Phys. Rev. B 47, 15865 (1993); F.M. Leibsle, S.S. Dhesi, S.D. Barrett and A.W. Robinson: Surf. Sci. 317, 309 (1994).
13) Y. Matsumoto and K. Tanaka: Jpn. Appl. Phys. 37, Pt 2, No. 2 A, L 154 (1998).
14) K. Tanaka, Y. Matsumoto, T. Fujita and Y. Okawa: Appl. Surf. Sci. 130-132, 475 (1998).
15) E. Bauer: Z. Kristallogr.110, 372 (1958); E. Bauer and J. H. van der Merwe: Phys. Rev. B 33, 3657 (1986).

抄録

Patterning of metal surfaces by using chemical reactions is a promissing method for the atomic-scale surface fabrica-tion. In this paper we present patterning reactions involving self-assembly processes with two examples: (1) (-Cu-O-) on Ag(110), which is prepared using such a chemical reaction as (-Ag-O-)+Cu→(-Cu-O-)+Ag on Ag(110) and the de-composition of (-Cu-O-) strings on Ag(110) forming a uniform size Cu₆ cluster; (2) Depositing Ni on c(2×2)-N Cu (100), where Ni thin films with an average size of 50Å are grown at the crossing of the boundaries of c(2×2)-N patches. In addition, we also show HREELS and ARUPS data in the (-Cu-O-) Ag(110) surface.

責任著者(Corresponding author)

訂正情報

J-STAGEへの登録はこちら（無料）