Dynamic Behavior of Surface Atoms on Si(001) and Ge(001) Observed by Variable Temperature STM

Tomoshige SATO; Takaaki AMAKUSA; Masashi IWATSUKI; Hiroshi TOCHIHARA

doi:10.1380/jsssj.19.652

温度可変STMで観察したSi(001),Ge(001)表面の動的現象

佐藤智重, 天草貴昭, 岩槻正志, 栃原浩

著者情報

ジャーナルフリー

1998 年 19 巻 10 号 p. 652-657

DOI https://doi.org/10.1380/jsssj.19.652

詳細

発行日: 1998/10/10 受付日: 1997/10/30 J-STAGE公開日: 2009/08/07 受理日: 1997/10/30 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 論文抄録訂正内容: Wrong : Dynamic behavior of surface atoms on Si(001) and Ge(001) was investigated by a Variable-Temperature (VT) STM. In a range of sample temperature from 30 K to 1200 K, a variety of dynamical atomic-processes were observed on the surfaces. (1) The flip-flop motion of buckled dimers was detected on Ge(001) surface at room temperature (RT). (2) The structural phase-transition from 2×1 to c(4×2) was observed both on Si(001) and Ge(001) surfaces upon cooling from RT. (3) The detachment and attachment of dimers at step edges were observed at high temperatures on Si(001) and Ge(001) surfaces. It is emphasized that time dependent VT-STM will provide fruitful information concerning the dynamic processes of surface atoms with atomic resolution.
Right : Dynamic behavior of surface atoms on Si(001) and Ge(001) was investigated by a Variable-Temperature (VT) STM. In a range of sample temperature from 30 K to 1200 K, a variety of dynamical atomic-processes were observed on the surfaces. (1) The flip-flop motion of buckled dimers was detected on Ge(001) surface at room temperature (RT). (2) The structural phase-transition from 2×1 to c(4×2) was observed both on Si(001) and Ge(001) surfaces upon cooling from RT. (3) The detachment and attachment of dimers at step edges were observed at high temperatures on Si(001) and Ge(001) surfaces. It is emphasized that time dependent VT-STM will provide fruitful information concerning the dynamic processes of surface atoms with atomic resolution.

訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 1) R.M. Tromp, R.J. Hamers and J.E. Demuth: Phys. Rev. Lett. 55,1303 (1985).
2) R.J. Hamers, R.M. Tromp and J.E. Demuth: Phys. Rev. B 34, 5343 (1986).
3) J.A. Kubby, J.E. Griffith, R.S. Becker and J.S. Vickers: Phys. Rev. B 36, 6079 (1987).
4) T. Tabata, T. Aruga and Y. Murata: Surf. Sci.179, L 63 (1987).
5) M. Kubota and Y. Murata: Phys. Rev. B 49, 4810 (1994).
6) RIG. Uhrberg, G.V. Hansseor, J.M. Nicholls and S.A. Flödstrom: Phys. Rev. B 24, 4686 (1981).
7) R.A. Walkow: Phys. Rev. Lett. 68, 2636 (1992).
8) H. Tochihara, T. Amakusa and M. Iwatsuki: Phys. Rev. B 50, 12262 (1994).
9) M. Iwatsuki, T. Sato and Y. Yamamoto: Appl. Surf. Sci. 92, 321(1996).
12) T. Sato, T. Sueyoshi, T..Amakusa, M. Iwatsuki and H. Tochihara: Surf. Sci. 344, 328 (1995).
13) T. Komura, M. Yoshimura and T. Yao: J. Vac. Sci. Technol. B 14, 906 (1996).14) H. Shigekawa, K. Hata, K. Miyake, M. Ishida and S. Ozawa: Phys. Rev. B 55, 15448 (1997).
15) Y. Nakamura, H. Kawai and M. Nakayama: Phys. Rev. B 52, 8231 (1995).
16) Y. Nakamura, H. Kawai and M. Nakayama: Surf. Sci. 357/358, 500 (1996).
17) N. Kitamura, B.S. Swartzentruber, MG. Lagally and M. B. Webb: Phys. Rev. B 48, 5704 (1993).
18) C. Pearson, B. Borovsky, M. Krueger, R. Curtis and E. Ganz: Phys. Rev. Lett. 74, 2710 (1995).

Right : 1) R.M. Tromp, R.J. Hamers and J.E. Demuth: Phys. Rev. Lett. 55,1303 (1985).
2) R.J. Hamers, R.M. Tromp and J.E. Demuth: Phys. Rev. B 34, 5343 (1986).
3) J.A. Kubby, J.E. Griffith, R.S. Becker and J.S. Vickers: Phys. Rev. B 36, 6079 (1987).
4) T. Tabata, T. Aruga and Y. Murata: Surf. Sci.179, L 63 (1987).
5) M. Kubota and Y. Murata: Phys. Rev. B 49, 4810 (1994).
6) RIG. Uhrberg, G.V. Hansseor, J.M. Nicholls and S.A. Flödstrom: Phys. Rev. B 24, 4686 (1981).
7) R.A. Walkow: Phys. Rev. Lett. 68, 2636 (1992).
8) H. Tochihara, T. Amakusa and M. Iwatsuki: Phys. Rev. B 50, 12262 (1994).
9) M. Iwatsuki, T. Sato and Y. Yamamoto: Appl. Surf. Sci. 92, 321(1996).
12) T. Sato, T. Sueyoshi, T..Amakusa, M. Iwatsuki and H. Tochihara: Surf. Sci. 344, 328 (1995).
13) T. Komura, M. Yoshimura and T. Yao: J. Vac. Sci. Technol. B 14, 906 (1996).14) H. Shigekawa, K. Hata, K. Miyake, M. Ishida and S. Ozawa: Phys. Rev. B 55, 15448 (1997).
15) Y. Nakamura, H. Kawai and M. Nakayama: Phys. Rev. B 52, 8231 (1995).
16) Y. Nakamura, H. Kawai and M. Nakayama: Surf. Sci. 357/358, 500 (1996).
17) N. Kitamura, B.S. Swartzentruber, MG. Lagally and M. B. Webb: Phys. Rev. B 48, 5704 (1993).
18) C. Pearson, B. Borovsky, M. Krueger, R. Curtis and E. Ganz: Phys. Rev. Lett. 74, 2710 (1995).

抄録

Dynamic behavior of surface atoms on Si(001) and Ge(001) was investigated by a Variable-Temperature (VT) STM. In a range of sample temperature from 30 K to 1200 K, a variety of dynamical atomic-processes were observed on the surfaces. (1) The flip-flop motion of buckled dimers was detected on Ge(001) surface at room temperature (RT). (2) The structural phase-transition from 2×1 to c(4×2) was observed both on Si(001) and Ge(001) surfaces upon cooling from RT. (3) The detachment and attachment of dimers at step edges were observed at high temperatures on Si(001) and Ge(001) surfaces. It is emphasized that time dependent VT-STM will provide fruitful information concerning the dynamic processes of surface atoms with atomic resolution.

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