1998 年 19 巻 11 号 p. 747-751
Surface roughening processes in the molecular beam epitaxy of GaAs are studied by in-situ scanning electron micros-copy. Three types of onset of roughening are observed, that is, smooth-to-rough change, coexistence of rough and smooth growths and purely rough growth. The results are compared to the quasi-smooth growth and to the growth of silicon on (111) surface, and the roughening mechanism is discussed.