The recent trend in STM research on silicon materials is reviewed using the INSPECA database of Kyushu Univ. As examples, our recent works on Sn epitaxy on silicon surfaces and the formation of nickel-silicides on hydrogenterminated surfaces are described. In the former work, atomic arrangements in real space were clarified, and the new structural phases were also found. In the latter works, it was confirmed that the hydrogen termination technique was useful to fabricate high-quality silicide thin films.