Step Dynamics during Molecular Beam Epitaxy on Si(100) and GaAs(100) Surfaces

Takaaki KAWAMURA; Akira ISHII

doi:10.1380/jsssj.20.845

SiとGaAs分子線エピタクシャル成長中のステップダイナミックス

川村隆明, 石井晃

著者情報

ジャーナルフリー

1999 年 20 巻 12 号 p. 845-852

DOI https://doi.org/10.1380/jsssj.20.845

詳細

発行日: 1999/12/10 受付日: 1999/08/25 J-STAGE公開日: 2009/08/07 受理日: 1999/08/25 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 1) S.A. Barnett and A. Rockett: Surf. Sci. 198, 133 (1988).
2) S. Clarke and D.D. Vvedensky: Phys. Rev. B 37, 6559 (1988).
3) T. Kawamura: Prog. Surf. Sci. 44, 67 (1993).
4) A. Ishii and T. Kawamura: Appl. Surf. Sci. 130-132, 403 (1998).
5) T. Kawamura and A. Ishii: Surf. Sci. 438,155 (1999).
6) D.J. Chadi: Phys. Rev. Lett. 59, 1691 (1987).
7) M.R. Wilby, S. Clarke, T. Kawamura and D.D. Vvedensky: Phys. Rev. B 40, 10617 (1989).
8) T. Kawamura and M . R. Wilby : Surf. Sci. 283, 360 (1993).
9) B. Voigtländer, T. Weber, P. &Scaron;milauer and D.E. Wolf: Phys. Rev. Lett. 78, 2164 (1997).
10) D.J. Chadi: J. Vac. Sci. Technol. A5, 834 (1987).
11) T. Hashizume, Q.K. Xue, J.M. Zhou, A. Ichimiya and T. Sakurai: Phys. Rev. B 51, 4200 (1995).
12) D.K. Biegelsen, R.D. Bringans, J.E. Northrup and L.-E. Swartz: Phys. Rev. B 41, 5701 (1990).
13) T. Ito and K. Shiraishi: Jpn. J. Appl. Phys. 37, L 262 (1998).
14) J. Sudijono, M.D. Johnson, C.W. Snyder, M.B. Elowitz and B.G. Off: Phys. Rev. Lett. 69, 2811 (1992).
15) K. Seino, A. Ishii and T. Aisaka: Surf. Sci. 438, 43 (1999).
16) T. Kawamura: Surf. Sci. 298, 331 (1993).
17) T. Shitara, D.D. Vvedensky, M.R. Wilby, J. Zhang, J.H. Neave and B . A . Joyce : Phys. Rev. B 46, 6815, 6825 (1992).

Right : 1) S.A. Barnett and A. Rockett: Surf. Sci. 198, 133 (1988).
2) S. Clarke and D.D. Vvedensky: Phys. Rev. B 37, 6559 (1988).
3) T. Kawamura: Prog. Surf. Sci. 44, 67 (1993).
4) A. Ishii and T. Kawamura: Appl. Surf. Sci. 130-132, 403 (1998).
5) T. Kawamura and A. Ishii: Surf. Sci. 438,155 (1999).
6) D.J. Chadi: Phys. Rev. Lett. 59, 1691 (1987).
7) M.R. Wilby, S. Clarke, T. Kawamura and D.D. Vvedensky: Phys. Rev. B 40, 10617 (1989).
8) T. Kawamura and M . R. Wilby : Surf. Sci. 283, 360 (1993).
9) B. Voigtländer, T. Weber, P. Šmilauer and D.E. Wolf: Phys. Rev. Lett. 78, 2164 (1997).
10) D.J. Chadi: J. Vac. Sci. Technol. A5, 834 (1987).
11) T. Hashizume, Q.K. Xue, J.M. Zhou, A. Ichimiya and T. Sakurai: Phys. Rev. B 51, 4200 (1995).
12) D.K. Biegelsen, R.D. Bringans, J.E. Northrup and L.-E. Swartz: Phys. Rev. B 41, 5701 (1990).
13) T. Ito and K. Shiraishi: Jpn. J. Appl. Phys. 37, L 262 (1998).
14) J. Sudijono, M.D. Johnson, C.W. Snyder, M.B. Elowitz and B.G. Off: Phys. Rev. Lett. 69, 2811 (1992).
15) K. Seino, A. Ishii and T. Aisaka: Surf. Sci. 438, 43 (1999).
16) T. Kawamura: Surf. Sci. 298, 331 (1993).
17) T. Shitara, D.D. Vvedensky, M.R. Wilby, J. Zhang, J.H. Neave and B . A . Joyce : Phys. Rev. B 46, 6815, 6825 (1992).

抄録

A step plays an important role in the growth process by molecular beam epitaxy, as it serves an active site for incorporating adatoms on the surface. The shape of steps changes by incorporating an adatom, which in turn changes the behavior of adatoms around the step. The shape and the motion of steps are well correlated with adatom kinetics during the growth. Based on a Monte Carlo simulation, such a step dynamics is studied of the epitaxial growth on vicinal surfaces of Si(100) and GaAs(100). There are two types of monatomic height steps on Si(100) and two types of biatomic height steps on GaAs(100). Common and different features during the growth on Si and GaAs are pointed out by showing the morphologies as well as the surface step density variations.

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